
Chair Professor
Electronic and Computer Engineering
Professor Chen received a BS degree in Department of Electronics, Peking University in 1988. On a CUSPEA (China-U.S. Physics Examinations and Applications) fellowship, he went to University of Maryland, College Park, USA, in 1988, and obtained his PhD in 1993. From Jan. 1994 to Dec. 1995, he was a Research Engineer in NTT LSI laboratories, Atsugi, Japan, engaging in the research and development of functional quantum effect devices and heterojunction FET's (HFET's). In particular, he developed the device technology for monolithic integration of resonant tunneling diodes and HFET's (MISFET and HEMT) on both GaAs and InP substrates, for applications in ultra-high speed signal processing and communication systems. He also developed the enhancement-mode HEMT technology for single polarity voltage supply RF/microwave circuits.
Last updated: 4/10/2026